Concepedia

V. V. Tret’yakov

VV

Statistics

Publications

13

Citations

304

H-Index

12

Active since

1993

Affiliations

Physico-Technical Institute(Current)

Institute of Semiconductor Physics

Russian Academy of Sciences

University of Nottingham

Texas Tech University

V. V. Tret’yakov is an author at Physico-Technical Institute specializing in materials science, electronic materials, and semiconductor physics.

Publications per year

1993–2002

13

Publications

13

Composition dependence of the optical phonon energies in hexagonal AlxGa1−xN

M. Holtz, T. Prokofyeva, M. Seon et al. · Journal of Applied Physics · 2001 · 65 citations

, , +17

Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity

N. A. Bernt, A. I. Veı̆nger, M. D. Vilisova et al. · Physics of the Solid State · 1993 · 47 citations

, , +13

Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates

L. C. Jenkins, T.S. Cheng, C. T. Foxon et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 30 citations

, , +17

Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

V. V. Chaldyshev, N. N. Faleev, A. E. Kunitsyn et al. · Semiconductor Science and Technology · 1997 · 26 citations

, , +17

Gas source molecular beam epitaxy of high quality AlxGa1−xN (0⩽x⩽1) on Si(111)

S. A. Nikishin, G. Kipshidze, V. Kuryatkov et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 21 citations

, , +17

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