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Applied Physics Letters

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Direct band-gap crossover in epitaxial monolayer boron nitride

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Nature Communications

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T.S. Cheng, L. C. Jenkins, S. E. Hooper, +3

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringCrystal Growth TechnologySemiconductorsMixed Phase Structure +14

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Thi Quynh Phuong Vuong, Guillaume Cassabois, Pierre Valvin, +10

2D Materials

Photoluminescence of MBE grown wurtzite Be-doped GaN

D J Dewsnip, A. V. Andrianov, I. Harrison, +6

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Wide-bandgap SemiconductorNew LinesElectrical EngineeringPhotoluminescenceEngineering +9

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C. T. Foxon, T.S. Cheng, D. E. Lacklison, +7

Journal of Crystal Growth

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Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/(Al,Ga)As quantum wells

Bryan E. Cole, J.M. Chamberlain, M. Henini, +7

Physical review. B, Condensed matter

Cr EnergyQuantum ScienceEngineeringPhysicsNatural Sciences +12

Domain boundaries in epitaxial wurtzite GaN

Yan Xin, Paul D. Brown, C. J. Humphreys, +2

Applied Physics Letters

Materials ScienceSemiconductorsWide-bandgap SemiconductorEpitaxial GrowthEngineering +11

Far-infrared and Raman analysis of phonons and phonon interface modes in GaN epilayers on GaAs and GaP substrates

G. Mirjalili, T.J. Parker, S. Farjami Shayesteh, +4

Physical review. B, Condensed matter

Wide-bandgap SemiconductorEngineeringPhysicsOptical PropertiesPhonon Interface Modes +11

Nitrogen species from radio frequency plasma sources used for molecular beam epitaxy growth of GaN

A.V Blant, O. H. Hughes, T.S. Cheng, +1

Plasma Sources Science and Technology

Wide-bandgap SemiconductorElectrical EngineeringNitrogen SpeciesEngineeringRf Semiconductor +10