T.S. Cheng

Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 409 citations

Materials Science, Aluminium Nitride, Engineering +10

Direct band-gap crossover in epitaxial monolayer boron nitride

Christine Elias, Pierre Valvin, Thomas Pelini et al. · Nature Communications · 2019 · 250 citations · Full text

Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

T.S. Cheng, L. C. Jenkins, S. E. Hooper et al. · Applied Physics Letters · 1995 · 154 citations

Wide-bandgap Semiconductor, Engineering, Crystal Growth Technology +16

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Thi Quynh Phuong Vuong, Guillaume Cassabois, Pierre Valvin et al. · 2D Materials · 2017 · 124 citations · Full text

Photoluminescence of MBE grown wurtzite Be-doped GaN

D J Dewsnip, A. V. Andrianov, I. Harrison et al. · Semiconductor Science and Technology · 1998 · 66 citations

Wide-bandgap Semiconductor, New Lines, Electrical Engineering +11