A. V. Andrianov

Photoluminescence of MBE grown wurtzite Be-doped GaN

D J Dewsnip, A. V. Andrianov, I. Harrison et al. · Semiconductor Science and Technology · 1998 · 67 citations

Engineering, Materials Engineering, Materials Science +17

Low-temperature luminescence study of GaN films grown by MBE

A. V. Andrianov, D. E. Lacklison, John Orton et al. · Semiconductor Science and Technology · 1996 · 48 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

Ruidong Xia, E.C. Larkins, I. Harrison et al. · IEEE Photonics Technology Letters · 2002 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium

A. V. Andrianov, A. O. Zakhar’in, I. N. Yassievich et al. · Journal of Experimental and Theoretical Physics Letters · 2004 · 38 citations

Engineering, Electrical Engineering, Materials Science +13

Terahertz impurity luminescence under the interband photoexcitation of semiconductors

A. V. Andrianov, A. O. Zakhar’in, Yu. L. Ivánov et al. · Journal of Experimental and Theoretical Physics Letters · 2010 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +14