A. V. Andrianov - Concepedia

Author

A. V. Andrianov

Also Known As

A V Andrianov, A V. Andrianov, A. Andrianov, A. V. Andrianov, A.V Andrianov, A.V. Andrianov, Alexander Andrianov, Alexander V Andrianov, Alexander V. Andrianov

173

Publications

Citations

H-Index

Concepts

All Affiliations

Ioffe Institute University of Nottingham Russian Academy of Sciences Peter the Great St. Petersburg Polytechnic University Physico-Technical Institute

About

A. V. Andrianov is an author at Ioffe Institute specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	22	568
2	Applied Physics	16	21	549
3	Natural Sciences	2	2	75
4	Medicine	1	1	19
5	Chemistry	1	1	16

A. V. Andrianov

Publications

769

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence of MBE grown wurtzite Be-doped GaN D J Dewsnip, A. V. Andrianov, I. Harrison, Semiconductor Science and Technology Wide-bandgap SemiconductorNew LinesElectrical EngineeringPhotoluminescenceEngineering	1998	66
Low-temperature luminescence study of GaN films grown by MBE A. V. Andrianov, D. E. Lacklison, John Orton, Semiconductor Science and Technology Wide-bandgap SemiconductorPhotonicsPhonon EnergyPhotoluminescenceEngineering	1996	48
Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars Ruidong Xia, E.C. Larkins, I. Harrison, IEEE Photonics Technology Letters Strain ThresholdAdvanced Laser ProcessingEngineeringLaser-induced BreakdownNew Detailed Approach	2002	39
Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium A. V. Andrianov, A. O. Zakhar’in, I. N. Yassievich, Journal of Experimental and Theoretical Physics Letters	2004	38
Terahertz impurity luminescence under the interband photoexcitation of semiconductors A. V. Andrianov, A. O. Zakhar’in, Yu. L. Ivánov, Journal of Experimental and Theoretical Physics Letters	2010	36
Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes A. V. Andrianov, S.R.A. Dods, J. Morgan, Journal of Applied Physics Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics	2000	34
Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation A. O. Zakhar’in, A. V. Andrianov, A. Yu. Egorov, Applied Physics Letters PhotonicsElectrical EngineeringPhotoluminescenceTerahertz SpectroscopyEngineering	2010	31
Short-lived green band and time evolution of the photoluminescence spectrum of porous silicon A. V. Andrianov, D. Kovalev, V. B. Shuman, PhotoluminescenceEngineeringShort-lived Green BandPhysicsApplied Physics	1992	29
Anomalous photoluminescence polarization of porous silicon A. V. Andrianov, D. Kovalev, N. N. Zinov’ev, PhotoluminescenceEngineeringPhysicsApplied PhysicsPorous Silicon	1993	28
Terahertz radiation due to random grating coupled surface plasmon polaritons T. V. Shubina, N. A. Gippius, V. A. Shalygin, Physical Review B PlasmonicsThz PhotonicsTerahertz PhysicsTerahertz SpectroscopyPhotonics	2011	28

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