Concepedia

A. V. Andrianov

AV

33

Publications

769

Citations

18

H-Index

1992

Active since

Affiliations

Ioffe Institute(Current)

University of Nottingham

Russian Academy of Sciences

Peter the Great St. Petersburg Polytechnic University

Physico-Technical Institute

A. V. Andrianov is an author at Ioffe Institute specializing in engineering, applied physics, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsOptoelectronicsElectrical EngineeringOptical PropertiesTerahertz SpectroscopyPhotonicsMaterial ScienceThz Photonics

Publications per year

1992–2022

33

Publications

33

Photoluminescence of MBE grown wurtzite Be-doped GaN

D J Dewsnip, A. V. Andrianov, I. Harrison et al. · Semiconductor Science and Technology · 1998 · 66 citations

Wide-bandgap Semiconductor, New Lines, Electrical Engineering +11

Low-temperature luminescence study of GaN films grown by MBE

A. V. Andrianov, D. E. Lacklison, John Orton et al. · Semiconductor Science and Technology · 1996 · 48 citations · Full text

Wide-bandgap Semiconductor, Photonics, Phonon Energy +14

Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

Ruidong Xia, E.C. Larkins, I. Harrison et al. · IEEE Photonics Technology Letters · 2002 · 39 citations

Strain Threshold, Advanced Laser Processing, Engineering +14

Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium

A. V. Andrianov, A. O. Zakhar’in, I. N. Yassievich et al. · Journal of Experimental and Theoretical Physics Letters · 2004 · 38 citations

Terahertz impurity luminescence under the interband photoexcitation of semiconductors

A. V. Andrianov, A. O. Zakhar’in, Yu. L. Ivánov et al. · Journal of Experimental and Theoretical Physics Letters · 2010 · 36 citations

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