I. N. Yassievich - Concepedia

Author

I. N. Yassievich

Also Known As

I N Yassievich, I Yassievich, I. N. YASSIEVICH, I. N. Yassievich, I. YASSIEVICH, I.N Yassievich, I.N. Yassievich, Irina N Yassievich, Irina N. Yassievich, Irina Yassievich

207

Publications

3.8K

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Russian Academy of Sciences Lund University Institute of Radio-Engineering and Electronics Ioffe Institute

About

I. N. Yassievich is an author at Physico-Technical Institute specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	34	2.2K
2	Applied Physics	23	33	2.1K
3	Electrical Engineering	12	14	846
4	Natural Sciences	3	3	287
5	Chemistry	1	1	74

I. N. Yassievich

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications Dolf Timmerman, Ignacio Izeddin, Peter Stallinga, Nature Photonics Materials ScienceEngineeringApplied PhysicsSemiconductor Device FabricationNanocrystalline Material	2008	320
Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals W. D. A. M. de Boer, Dolf Timmerman, Kateřina Dohnalová, Nature Nanotechnology Materials SciencePhotonicsNanocrystalline MaterialPhotoluminescenceEngineering	2010	308
Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors Sergey Ganichev, E. Ziemann, W. Prettl, Physical review. B, Condensed matter EngineeringCharge TransportSemiconductor DeviceSemiconductorsDeep Levels	2000	229
Radiative states in type-II GaSb/GaAs quantum wells N. N. Ledentsov, J. Böhrer, Max Beer, Physical review. B, Condensed matter	1995	217
Spin-dependent tunneling through a symmetric semiconductor barrier V. I. Perel, S. A. Tarasenko, I. N. Yassievich, Physical review. B, Condensed matter	2003	210
Spin-dependent resonant tunneling in symmetrical double-barrier structures M. M. Glazov, P. S. Alekseev, M. A. Odnoblyudov, Physical Review B EngineeringMagnetic ResonanceSpin DynamicSpin PhenomenonSemiconductors	2005	129
Room-temperature photoluminescence of erbium-doped hydrogenated amorphous silicon M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova, Applied Physics Letters Electronic DevicesCrystalline Silicon A-siEngineeringPhotoluminescenceOptical Properties	1995	104
Excitation and temperature quenching of Er-induced luminescence in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si:H(Er) W. Fuhs, Isabell Ulber, G. Weiser, Physical review. B, Condensed matter Localized Excited StateEngineeringLuminescent GlassAmorphous MatrixExcited Erbium Ions	1997	98
The mechanisms of electronic excitation of rare earth impurities in semiconductors I. N. Yassievich, Lionel C. Kimerling Semiconductor Science and Technology EngineeringSemiconductorsIi-vi SemiconductorIon ImplantationElectron Spectroscopy	1993	95
Widely tunable continuous-wave THz laser Yu. P. Gousev, Konstantin A. Korolev, V. P. Sinis, Applied Physics Letters Thz PhotonicsPhotonicsTerahertz SpectroscopyEngineeringPhysics	1999	95

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