D. E. Lacklison - Concepedia

Author

D. E. Lacklison

University of Nottingham

Also Known As

D E Lacklison, D. E. Lacklison, D. Lacklison, D.E Lacklison, D.E. Lacklison

Publications

Citations

H-Index

Concepts

All Affiliations

University of Nottingham Philips (United Kingdom)Philips (Finland)Physico-Technical Institute

About

D. E. Lacklison is an author at University of Nottingham specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	34	1.4K
2	Applied Physics	21	33	1.4K
3	Natural Sciences	9	9	589
4	Education	1	1	23
5	Medicine	1	1	15

D. E. Lacklison

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Magnetooptic properties and applications of bismuth substituted iron garnets G. Scott, D. E. Lacklison IEEE Transactions on Magnetics Magnetic PropertiesOptical MaterialsEngineeringFaraday ConfigurationMagnetic Resonance	1976	220
Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy T.S. Cheng, L. C. Jenkins, S. E. Hooper, Applied Physics Letters Wide-bandgap SemiconductorEngineeringCrystal Growth TechnologySemiconductorsMixed Phase Structure	1995	154
Garnets with high magnetooptic figures of merit in the visible region D. E. Lacklison, G. Scott, H. I. Ralph, IEEE Transactions on Magnetics Magnetic PropertiesEngineeringMagnetic ResonanceOptical AbsorptionChemistry	1973	74
Absorption spectra of Bi3+ and Fe3+ in Y3Ga5O12 D. E. Lacklison, G. B. Scott, J. L. Page Solid State Communications Absorption SpectraNatural SciencesSpectroscopyCondensed Matter PhysicsAbsorption Spectroscopy	1974	67
Photoluminescence of MBE grown wurtzite Be-doped GaN D J Dewsnip, A. V. Andrianov, I. Harrison, Semiconductor Science and Technology Wide-bandgap SemiconductorNew LinesElectrical EngineeringPhotoluminescenceEngineering	1998	66
The growth and properties of group III nitrides C. T. Foxon, T.S. Cheng, D. E. Lacklison, Journal of Crystal Growth Inorganic ChemistryEngineeringCubic Boron NitrideApplied PhysicsChemistry	1995	63
Minority carrier lifetime in doped and undoped p-type Cd<sub>x</sub>Hg<sub>1-x</sub>Te D. E. Lacklison, P. Capper Semiconductor Science and Technology SemiconductorsMaterials ScienceElectrical EngineeringIi-vi SemiconductorEngineering	1987	60
Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures J. J. Harris, C. T. Foxon, D. E. Lacklison, Superlattices and Microstructures Wide-bandgap SemiconductorEngineeringPhysicsAs/gaas 2DegApplied Physics	1986	58
Two-dimensional electron gas structures with mobilities in excess of 3×106 cm2 V−1 s−1 J. J. Harris, C. T. Foxon, K.W.J. Barnham, Journal of Applied Physics Undoped Spacer ThicknessEngineeringElectronic StructureSemiconductor NanostructuresSemiconductors	1987	56
Observation of strong localization effects in (AlGa)As–GaAs two-dimensional electron gas structures at low magnetic fields C. T. Foxon, J. J. Harris, R. G. Wheeler, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Categoryquantum ElectronicsEngineeringOptoelectronic DevicesElectron PhysicSemiconductors	1986	52

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