S. E. Hooper

Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

T.S. Cheng, L. C. Jenkins, S. E. Hooper et al. · Applied Physics Letters · 1995 · 154 citations

Wide-bandgap Semiconductor, Engineering, Crystal Growth Technology +16

Photoluminescence of MBE grown wurtzite Be-doped GaN

D J Dewsnip, A. V. Andrianov, I. Harrison et al. · Semiconductor Science and Technology · 1998 · 66 citations

Wide-bandgap Semiconductor, New Lines, Electrical Engineering +11

The growth and properties of group III nitrides

C. T. Foxon, T.S. Cheng, D. E. Lacklison et al. · Journal of Crystal Growth · 1995 · 63 citations

Inorganic Chemistry, Engineering, Cubic Boron Nitride +3

Low-temperature luminescence study of GaN films grown by MBE

A. V. Andrianov, D. E. Lacklison, John Orton et al. · Semiconductor Science and Technology · 1996 · 48 citations · Full text

Wide-bandgap Semiconductor, Photonics, Phonon Energy +14

InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

S. E. Hooper, M. Kauer, V. Bousquet et al. · Electronics Letters · 2004 · 46 citations

Optical Pumping, Photonics, Room Temperature +15