S. E. Hooper

Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

T.S. Cheng, L. C. Jenkins, S. E. Hooper et al. · Applied Physics Letters · 1995 · 154 citations

Engineering, Materials Engineering, Materials Science +16

Photoluminescence of MBE grown wurtzite Be-doped GaN

D J Dewsnip, A. V. Andrianov, I. Harrison et al. · Semiconductor Science and Technology · 1998 · 67 citations

Engineering, Materials Engineering, Materials Science +17

The growth and properties of group III nitrides

C. T. Foxon, T.S. Cheng, D. E. Lacklison et al. · Journal of Crystal Growth · 1995 · 64 citations

Natural Sciences, Chemistry, Materials Science +8

Low-temperature luminescence study of GaN films grown by MBE

A. V. Andrianov, D. E. Lacklison, John Orton et al. · Semiconductor Science and Technology · 1996 · 48 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

S. E. Hooper, M. Kauer, V. Bousquet et al. · Electronics Letters · 2004 · 46 citations

Engineering, Electrical Engineering, Materials Science +17