V. Bousquet - Concepedia

Author

V. Bousquet

Centre National de la Recherche Scientifique

Also Known As

V Bousquet, V. Bousquet, Valerie Bousquet, Valérie Bousquet

Publications

656

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Sharp Laboratories of Europe (United Kingdom)

About

V. Bousquet is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	12	17	533
2	Engineering	11	15	485
3	Electrical Engineering	8	8	323
4	Materials Science	8	8	154
5	Materials Engineering	1	1	12

V. Bousquet

Publications

560

Citations

H-Index

Page 1

	Year	Citations
Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods P. Vennéguès, B. Beaumont, V. Bousquet, Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEpitaxial GrowthEngineering	2000	189
InGaN multiple quantum well laser diodes grown by molecular beam epitaxy S. E. Hooper, M. Kauer, V. Bousquet, Electronics Letters Optical PumpingPhotonicsRoom TemperatureEngineeringLaser Science	2004	46
A Two-Step Method for Epitaxial Lateral Overgrowth of GaN B. Beaumont, V. Bousquet, P. Vennéguès, physica status solidi (a) Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEpitaxial GrowthEngineering	1999	45
Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates V. Bousquet, E. Tournié, M. Laügt, Applied Physics Letters Materials ScienceIi-vi SemiconductorEpitaxial GrowthOptical MaterialsMolecular-beam Epitaxy	1997	37
Simulations of heteroepitaxial growth C. H. Grein, J. P. Faurie, V. Bousquet, Journal of Crystal Growth Pattern FormationEngineeringCrystal Growth TechnologyApplied PhysicsNumerical Simulation	1997	35
Hetero-epitaxial growth of BexZn1−xSe on Si(0 0 1) and GaAs(0 0 1) substrates J. P. Faurie, V. Bousquet, Paul Brunet, Journal of Crystal Growth Hetero-epitaxial GrowthPhysicsApplied PhysicsMolecular Beam EpitaxyEpitaxial Growth	1998	33
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy M. Kauer, S. E. Hooper, V. Bousquet, Electronics Letters	2005	27
Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layers V. Bousquet, E. Tournié, J. P. Faurie Journal of Crystal Growth Ii-vi SemiconductorElectrical EngineeringEngineeringApplied PhysicsSemiconductor Material	1998	18
High-power InGaN light emitting diodes grown by molecular beam epitaxy Kelsey E. Johnson, V. Bousquet, S. E. Hooper, Electronics Letters White OledPhotonicsElectrical EngineeringOptical MaterialsEngineering	2004	17
Nitrides optoelectronic devices grown by molecular beam epitaxy M. Kauer, V. Bousquet, S. E. Hooper, physica status solidi (a) PhotonicsElectrical EngineeringElectronic DevicesEngineeringRecent Room Temperature	2006	16

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