V. Bousquet

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

P. Vennéguès, B. Beaumont, V. Bousquet et al. · Journal of Applied Physics · 2000 · 189 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

S. E. Hooper, M. Kauer, V. Bousquet et al. · Electronics Letters · 2004 · 46 citations

Optical Pumping, Photonics, Room Temperature +15

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

B. Beaumont, V. Bousquet, P. Vennéguès et al. · physica status solidi (a) · 1999 · 45 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Structural and optical properties of lattice-matched ZnBeSe layers grown by molecular-beam epitaxy onto GaAs substrates

V. Bousquet, E. Tournié, M. Laügt et al. · Applied Physics Letters · 1997 · 37 citations

Materials Science, Ii-vi Semiconductor, Epitaxial Growth +13

Simulations of heteroepitaxial growth

C. H. Grein, J. P. Faurie, V. Bousquet et al. · Journal of Crystal Growth · 1997 · 35 citations

Pattern Formation, Engineering, Crystal Growth Technology +5