physica status solidi (a) · 1999 · 45 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSeed TechnologySemiconductor DevicesDislocations In SemiconductorsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor DefectsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCoalescenceEpitaxial DefectsEpitaxial Growth Of Wide-bandgap SemiconductorsEpitaxial Lateral OvergrowthGallium Nitride (Gan) MaterialsLow-temperature GrowthSelective Area EpitaxyTemperature-dependent Growth
We report on a two-step process for the epitaxial lateral overgrowth of GaN. In the first step, the selective area epitaxy proceeds at low temperature and GaN stripes with a triangular cross section are rapidly obtained. Then, in a second step, these stripes are used as seeds for epitaxial lateral overgrowth, the growth conditions being changed either by increasing the growth temperature or by introducing a Mg precursor. Fully coalesced and planar GaN samples are thereby achieved. A comparison between samples grown without and with this two-step process evidences an additional reduction in the threading defects density with the two-step process. The dislocations emerging from the seeds are drastically reduced to 5 × 106 to 107 cm—2 between the coalescence boundaries.
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Theory of Threading Edge and Screw Dislocations in GaN
J. Elsner, R. Jones, Peter Sitch et al. · Physical Review Letters · 1997 · 328 citations · Full text
Anisotropic epitaxial lateral growth in GaN selective area epitaxy
D. Kapolnek, S. Keller, R. Vetury et al. · Applied Physics Letters · 1997 · 302 citations