A. Bouillé

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

B. Beaumont, M. Vaille, G. Nataf et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 61 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, S. Dalmasso, P. de Mierry et al. · Japanese Journal of Applied Physics · 2001 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

B. Beaumont, V. Bousquet, P. Vennéguès et al. · physica status solidi (a) · 1999 · 45 citations

Engineering, Materials Engineering, Materials Science +17

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

B. Beaumont, P. Gibart, M. Vaille et al. · Journal of Crystal Growth · 1998 · 37 citations

Engineering, Materials Engineering, Materials Science +16

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

G. Nataf, B. Beaumont, A. Bouillé et al. · Journal of Crystal Growth · 1998 · 32 citations

Engineering, Materials Engineering, Materials Science +16