Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 413 citations

Engineering, Materials Engineering, Materials Science +17

Anisotropic epitaxial lateral growth in GaN selective area epitaxy

D. Kapolnek, S. Keller, R. Vetury et al. · Applied Physics Letters · 1997 · 302 citations

Engineering, Materials Engineering, Materials Science +15

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Theeradetch Detchprohm, K. Hiramatsu, Hiroshi Amano et al. · Applied Physics Letters · 1992 · 224 citations

Engineering, Materials Engineering, Materials Science +17

Growth of single crystal GaN substrate using hydride vapor phase epitaxy

Kouichi Naniwae, Shigetoshi Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1990 · 176 citations

Engineering, Materials Engineering, Materials Science +14

High pressure growth of GaN — new prospects for blue lasers

S. Porowski · Journal of Crystal Growth · 1996 · 158 citations

Engineering, Materials Engineering, Materials Science +16