Concepedia

M. Vaille

MV

20

Publications

953

Citations

15

H-Index

1986

Active since

Affiliations

Centre National de la Recherche Scientifique(Current)

Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

University of Monastir

Université Claude Bernard Lyon 1

M. Vaille is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceElectrical EngineeringPhysicsCrystalline DefectsMaterials EngineeringOptoelectronicsSurface ScienceThin Films

Publications per year

1986–2016

20

Publications

20

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

P. Vennéguès, B. Beaumont, V. Bousquet et al. · Journal of Applied Physics · 2000 · 189 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

P. Vennéguès, B. Beaumont, S. Haffouz et al. · Journal of Crystal Growth · 1998 · 126 citations

Materials Science, Carrier Gas, Wide-bandgap Semiconductor +8

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

H. Lahrèche, M. Leroux, M. Laügt et al. · Journal of Applied Physics · 2000 · 83 citations

Materials Engineering, Materials Science, Electrical Engineering +12

High quality GaN grown by MOVPE

B. Beaumont, M. Vaille, T. Boufaden et al. · Journal of Crystal Growth · 1997 · 75 citations

Materials Engineering, Electrical Engineering, High Quality Gan +6

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

B. Beaumont, M. Vaille, G. Nataf et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 61 citations · Full text

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