Concepedia

M. Vaille

MV

Statistics

Publications

20

Citations

956

H-Index

15

Active since

1986

Affiliations

Centre National de la Recherche Scientifique(Current)

Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

University of Monastir

Université Claude Bernard Lyon 1

M. Vaille is an author at Centre National de la Recherche Scientifique specializing in materials science, materials engineering, and electronic materials.

Publications per year

1986–2016

20

Publications

20

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

P. Vennéguès, B. Beaumont, V. Bousquet et al. · Journal of Applied Physics · 2000 · 190 citations

, , +17

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

P. Vennéguès, B. Beaumont, S. Haffouz et al. · Journal of Crystal Growth · 1998 · 126 citations

, , +16

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

H. Lahrèche, M. Leroux, M. Laügt et al. · Journal of Applied Physics · 2000 · 84 citations

, , +17

High quality GaN grown by MOVPE

B. Beaumont, M. Vaille, T. Boufaden et al. · Journal of Crystal Growth · 1997 · 75 citations

, , +8

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

B. Beaumont, M. Vaille, G. Nataf et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 61 citations · Full text

, , +17

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