26
Publications
620
Citations
15
H-Index
1996
Active since
T. Boufaden is an author at University of Monastir specializing in applied physics, engineering, and electrical engineering.
Top concepts
Applied PhysicsEngineeringElectrical EngineeringMaterial ScienceSurface ScienceOptoelectronicsMaterials EngineeringPhysicsThin FilmsSemiconductors
Publications per year
1996–2009
26
26
High quality GaN grown by MOVPE
B. Beaumont, M. Vaille, T. Boufaden et al. · Journal of Crystal Growth · 1997 · 75 citations
Materials Engineering, Electrical Engineering, High Quality Gan +6
Magnesium diffusion profile in GaN grown by MOVPE
Z. Benzarti, I. Halidou, Z. Bougrioua et al. · Journal of Crystal Growth · 2008 · 43 citations
Materials Engineering, Magnesium Diffusion Profile, Materials Science +5
Heavily silicon-doped GaN by MOVPE
I. Halidou, Z. Benzarti, Z. Chine et al. · Microelectronics Journal · 2001 · 42 citations
Porous silicon as an intermediate buffer layer for GaN growth on (100) Si
Adel Matoussi, T. Boufaden, A. Missaoui et al. · Microelectronics Journal · 2001 · 33 citations
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