Z. Chine

Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

Z. Chine, H. Fitouri, I. Zaied et al. · Semiconductor Science and Technology · 2010 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Heavily silicon-doped GaN by MOVPE

I. Halidou, Z. Benzarti, Z. Chine et al. · Microelectronics Journal · 2001 · 42 citations

Engineering, Materials Engineering, Materials Science +17

Effect of thermal annealing on structural and optical properties of the GaAs_0.963Bi_0.037alloy

I. Moussa, H. Fitouri, Z. Chine et al. · Semiconductor Science and Technology · 2008 · 41 citations

Engineering, Materials Engineering, Materials Science +17

Stress and density of defects in Si‐doped GaN

Z. Chine, A. Rebey, Hazem Touati et al. · physica status solidi (a) · 2006 · 31 citations

Natural Sciences, Materials Science, Physics +17

Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE

Mohamed Bouzidi, Z. Benzarti, I. Halidou et al. · Materials Science in Semiconductor Processing · 2015 · 28 citations

Engineering, Materials Engineering, Materials Science +16