S. Dassonneville

Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts

S. Dassonneville, A. Amokrane, Brigitte Sieber et al. · Journal of Applied Physics · 2001 · 65 citations

Materials Science, Photonics, Accelerating Voltage +15

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

B. Beaumont, V. Bousquet, P. Vennéguès et al. · physica status solidi (a) · 1999 · 45 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam

S. Dassonneville, A. Amokrane, Brigitte Sieber et al. · Journal of Applied Physics · 2001 · 15 citations · Full text

Wide-bandgap Semiconductor, Situ Cathodoluminescence Experiments, Engineering +16

Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire

S. Dassonneville, A. Amokrane, Brigitte Sieber et al. · Physica B Condensed Matter · 1999 · 15 citations · Full text

Wide-bandgap Semiconductor, Photoluminescence, Physics +4

Structural and microstructural evolution of amorphous Zr-Cu-Ag thin-film alloys under thermal constraint: An in situ approach

G.I. Nkou Bouala, Aurélien Etiemble, S. Dassonneville et al. · Journal of Alloys and Compounds · 2020 · 13 citations

Materials Science, Engineering, Situ Approach +11