V. V. Chaldyshev - Concepedia

Author

V. V. Chaldyshev

Also Known As

Chaldyshev V. V., Chaldyshev V.V., Chaldyshev, V. V., Chaldyshev,V. A., V V Chaldyshev, V. A. Chaldyshev, V. V. CHALDYSHEV, V. V. Chaldyshev, V.V Chaldyshev, V.V. Chaldyshev

232

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Institute of Semiconductor Physics Russian Academy of Sciences Ioffe Institute Max Planck Institute of Microstructure Physics

About

V. V. Chaldyshev is an author at Physico-Technical Institute specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	21	584
2	Applied Physics	17	21	584
3	Electrical Engineering	3	3	94
4	Natural Sciences	2	2	50
5	Chemistry	1	1	17

V. V. Chaldyshev

Publications

848

Citations

H-Index

Page 1

	Year	Citations
Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity N. A. Bernt, A. I. Veı̆nger, M. D. Vilisova, Physics of the Solid State Materials ScienceCrystal StructureLow TemperaturesEngineeringPhysics	1993	47
Energy Band Structure of Ternary Diamond‐Like A<sup>2</sup>B<sup>4</sup>C‐Type Semiconductors N. A. Goryunova, Yu. I. Polygalov, V. V. Chaldyshev physica status solidi (b) SemiconductorsDiamond-like CarbonEngineeringEnergy Band StructureApplied Physics	1970	46
Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates P. D. Altukhov, T. S. Argunova, A. A. Bakun, Semiconductor Science and Technology Ii-vi SemiconductorElectrical EngineeringBuffer StructureEngineeringPhotoluminescence	1993	44
Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs V. V. Chaldyshev, A. L. Kolesnikova Journal of Applied Physics EngineeringSemiconductor NanostructuresSemiconductorsNanoscale ModelingDislocation Loops	2004	40
Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy N. Cherkashin, S. Reboh, Martin Hÿtch, Applied Physics Letters Materials ScienceSemiconductorsElemental DistributionIi-vi SemiconductorEngineering	2013	39
Local stresses induced by nanoscale As–Sb clusters in GaAs matrix V. V. Chaldyshev, Alexandra Suvorova, A. L. Kolesnikova, Applied Physics Letters EngineeringLocal StressesSb ImpuritySemiconductor NanostructuresSemiconductors	2002	35
Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state V. V. Chaldyshev, Yuechao Chen, Alexander N. Poddubny, Applied Physics Letters Quantum PhotonicsEngineeringCavity QedPolariton DynamicOptical Properties	2011	33
Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties M. G. Mil’vidskiĭ, V. V. Chaldyshev Semiconductors	1998	33
Optical lattices of InGaN quantum well excitons V. V. Chaldyshev, A. S. Bolshakov, E. E. Zavarin, Applied Physics Letters PhotonicsQuantum ScienceQuantum Lattice SystemEngineeringPolariton Dynamic	2011	32
In–Ga intermixing in low-temperature grown GaAs delta doped with In V. V. Chaldyshev, Yu. G. Musikhin, Alexandra Suvorova, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	1999	32

Page 1