V. V. Chaldyshev

Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity

N. A. Bernt, A. I. Veı̆nger, M. D. Vilisova et al. · Physics of the Solid State · 1993 · 47 citations

Materials Science, Crystal Structure, Low Temperatures +10

Energy Band Structure of Ternary Diamond‐Like A²B⁴C‐Type Semiconductors

N. A. Goryunova, Yu. I. Polygalov, V. V. Chaldyshev · physica status solidi (b) · 1970 · 46 citations

Semiconductors, Diamond-like Carbon, Engineering +5

Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates

P. D. Altukhov, T. S. Argunova, A. A. Bakun et al. · Semiconductor Science and Technology · 1993 · 44 citations

Ii-vi Semiconductor, Electrical Engineering, Buffer Structure +13

Investigation of dislocation loops associated with As–Sb nanoclusters in GaAs

V. V. Chaldyshev, A. L. Kolesnikova · Journal of Applied Physics · 2004 · 40 citations

Engineering, Semiconductor Nanostructures, Semiconductors +19

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

N. Cherkashin, S. Reboh, Martin Hÿtch et al. · Applied Physics Letters · 2013 · 39 citations · Full text

Materials Science, Semiconductors, Elemental Distribution +15