S. Reboh - Concepedia

Author

S. Reboh

Commissariat à l'Énergie Atomique et aux Énergies Alternatives ORCID

Also Known As

Reboh, Shay, S Reboh, S. Reboh, Shay ReboH, Shay Reboh

Publications

928

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information CEA Grenoble Centre National de la Recherche Scientifique Institut polytechnique de Grenoble

About

S. Reboh is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	24	622
2	Applied Physics	16	24	622
3	Natural Sciences	2	2	73
4	Medicine	1	1	19
5	Biomedical Engineering	1	1	19

S. Reboh

Publications

720

Citations

H-Index

Page 1

	Year	Citations
Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain Sylvain Barraud, V. Lapras, Marie-Pierre Samson, EngineeringInner SpacerIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2016	108
Breakthroughs in 3D Sequential technology Laurent Brunet, C. Fenouillet-Béranger, P. Batude, EngineeringComputer Architecture3D ModelingComputer-aided DesignIntegrated Circuits	2018	51
Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy N. Cherkashin, S. Reboh, Martin Hÿtch, Applied Physics Letters Materials ScienceSemiconductorsElemental DistributionIi-vi SemiconductorEngineering	2013	39
Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology S. Reboh, R. Coquand, Sylvain Barraud, Applied Physics Letters EngineeringRelaxed SigeSilicon On InsulatorSemiconductor DeviceMechanical Relaxation	2018	39
Dynamic scattering theory for dark-field electron holography of 3D strain fields Axel Lubk, Elsa Javon, N. Cherkashin, Ultramicroscopy Strain FieldsEngineeringPhysicsApplied PhysicsElectron Diffraction	2013	37
Single G centers in silicon fabricated by co-implantation with carbon\n and proton Yoann Baron, Alrik Durand, Tobias Herzig, arXiv (Cornell University)	2022	35
Localized exfoliation versus delamination in H and He coimplanted (001) Si S. Reboh, Ângelo Alves de Mattos, J.F. Barbot, Journal of Applied Physics EngineeringDelamination BehaviorSilicon On InsulatorComplete Surface DelaminationIon Implantation	2009	28
Development of microcracks in hydrogen-implanted silicon substrates Jean-Daniel Penot, Damien Massy, F. Rieutord, Journal of Applied Physics Final SplitEngineeringMicromechanicsMechanical EngineeringMechanics Of Materials	2013	25
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet Transitors S. Reboh EngineeringChannel StressesSemiconductor DeviceNanoelectronicsCompressive Sige Channels	2019	25
On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies S. Reboh, F. Schaurich, A. Declémy, Journal of Applied Physics EngineeringSilicon On InsulatorHe+ IonsIon ImplantationSilicene	2010	23

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