S. Reboh

Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Sylvain Barraud, V. Lapras, Marie-Pierre Samson et al. · 2016 · 108 citations · Full text

Engineering, Inner Spacer, Integrated Circuits +16

Breakthroughs in 3D Sequential technology

Laurent Brunet, C. Fenouillet-Béranger, P. Batude et al. · 2018 · 51 citations

Engineering, Computer Architecture, 3D Modeling +25

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

N. Cherkashin, S. Reboh, Martin Hÿtch et al. · Applied Physics Letters · 2013 · 39 citations · Full text

Materials Science, Semiconductors, Elemental Distribution +15

Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

S. Reboh, R. Coquand, Sylvain Barraud et al. · Applied Physics Letters · 2018 · 39 citations

Engineering, Relaxed Sige, Silicon On Insulator +16

Dynamic scattering theory for dark-field electron holography of 3D strain fields

Axel Lubk, Elsa Javon, N. Cherkashin et al. · Ultramicroscopy · 2013 · 37 citations

Strain Fields, Engineering, Physics +6