Applied Physics Letters · 1991 · 128 citations · 6 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureElectronic MaterialsSemiconductor MaterialsCrystal GrowthDefects In Electronic MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor DefectsSemiconductor PhysicsColumnar GrowthCrystal Quality ControlLow-temperature GrowthMolecular Beam EpitaxyPolycrystalline GrowthSemiconductor CrystallographyStructural Quality AssessmentTemperature-dependent Growth
A systematic study of the change in structural quality of as-grown GaAs layers deposited at temperatures between 180 and 210 °C by molecular beam epitaxy was performed using transmission electron microscopy, double-crystal x-ray rocking curves, and particle-induced x-ray emission. We found that the crystal quality was correlated strongly with growth temperature near 200 °C. The lattice parameter and the amount of As incorporated in the layer were observed to increase at lower growth temperatures. After exceeding a certain growth-temperature-dependent layer thickness, large densities of pyramidal-type defects are formed, which at lowest growth temperature result in the breakdown of crystallinity and in columnar polycrystalline growth. The lattice expansion is ascribed to the excess As in the layers. The mechanisms of breakdown of crystallinity are discussed.
6
Defects in epitaxial multilayers
J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1974 · 1.5K citations
New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations
Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C
D. J. Eaglesham, L. N. Pfeiffer, K. W. West et al. · Applied Physics Letters · 1991 · 87 citations