W. Swider

Breakdown of crystallinity in low-temperature-grown GaAs layers

Z. Liliental‐Weber, W. Swider, K. M. Yu et al. · Applied Physics Letters · 1991 · 128 citations

Materials Science, Semiconductors, Engineering +13

Crystal structure of κ-In2Se3

Jacek B. Jasiński, W. Swider, J. Washburn et al. · Applied Physics Letters · 2002 · 92 citations · Full text

Materials Science, Materials Engineering, Crystal Structure +13

Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition

Z. Liliental‐Weber, Mourad Benamara, W. Swider et al. · Applied Physics Letters · 1999 · 91 citations

Materials Science, Materials Engineering, N Polarity +14

Synthesis of GaN by N ion implantation in GaAs (001)

Xi–Wei Lin, M. Behar, R.L. Maltez et al. · Applied Physics Letters · 1995 · 57 citations

Semiconductors, Materials Science, Electrical Engineering +11

Characterization of free-standing hydride vapor phase epitaxy GaN

Jacek B. Jasiński, W. Swider, Z. Liliental‐Weber et al. · Applied Physics Letters · 2001 · 54 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +11