Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

Abstract

We have demonstrated thin body III–V-semiconductor-on-insulator (III-V-OI) n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) on a Si wafer fabricated using a novel direct wafer bonding (DWB) process. A 100-nm-thick InGaAs channel was successfully transferred by the low damage and low temperature DWB process using low energy electron cyclotron resonance (ECR) plasma. The transferred InGaAs-OI nMOSFET on the Si wafer exhibited a high electron channel mobility of 1200 cm2·V-1·s-1, indicating that the present DWB process allows us to form thin III-V-OI channels without serious plasma and bonding damage. This technology is expected to open up the possibility of integrating the ultrathin body III-V-OI MOSFETs on Si platform.