Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

Low interface state density oxide-GaAs structures fabricated by <i>in</i> <i>situ</i> molecular beam epitaxy

M. Hong, M. Passlack, J. P. Mannáerts et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 165 citations

Engineering, Materials Engineering, Materials Science +17

Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates

F. Ren, M. Hong, W. S. Hobson et al. · 2002 · 36 citations

Engineering, Electrical Engineering, Microelectronics +14

Wet Chemical and Plasma Etching of Ga2 O 3 ( Gd2 O 3 )

F. Ren, Minghui Hong, J. P. Mannáerts et al. · Journal of The Electrochemical Society · 1997 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Sulfide treated GaAs MISFET's with gate insulator of photo-CVD grown P/sub 3/N/sub 5/ film

Yoon‐Ha Jeong, Ki-Hawn Choi, Seong-Kue Jo · IEEE Electron Device Letters · 1994 · 32 citations

Engineering, Electrical Engineering, Materials Science +15

Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by <i>in</i> <i>situ</i> molecular beam epitaxy

M. Passlack, M. Hong, Joseph P. Mannaerts et al. · Applied Physics Letters · 1996 · 30 citations

Engineering, Materials Engineering, Materials Science +17