2002 · 36 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsHigh-frequency Semiconductor DevicesIon ImplantationMetal-oxide-semiconductor Field-effect TransistorsWide-bandgap Semiconductor DevicesEnhancement-mode TransistorsGallium Arsenide Field-effect TransistorsGate DielectricsHigh Current Ion ImplantationInsulated-gate Field-effect TransistorsPower Mosfets
We report on the first demonstration of an enhancement-mode p-channel GaAs metal oxide field effect transistor (MOSFET) realized directly on GaAs semi-insulating substrate with a fully ion-implant technology. The device, with a 40/spl times/50 /spl mu/m/sup 2/ gate geometry, shows very good DC characteristics with transconductance of 0.3 mS/mm and an excellent gate breakdown field greater then 3 MV/cm.
2