J. R. Lothian - Concepedia

Author

J. R. Lothian

Also Known As

J Lothian, J R Lothian, J. Lothian, J. R. LOTHIAN, J. R. Lothian, J.R Lothian, J.R. Lothian, Jack Lothian, Lothian, Jack

152

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)University of Florida Nokia (United States)Plasma Processes (United States)Alcatel Lucent (Germany)

About

J. R. Lothian is an author at AT&T (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	58	1.9K
2	Applied Physics	26	56	1.9K
3	Chemical Engineering	5	5	201
4	Computer Engineering	2	2	25
5	Natural Sciences	1	1	16

J. R. Lothian

Publications

Citations

H-Index

Page 1

	Year	Citations
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide F. Ren, M. Hong, W. S. Hobson, Solid-State Electronics Electrical EngineeringEngineeringOxide ElectronicsApplied PhysicsGallium Oxide	1997	150
Ga<sub>2</sub>O<sub>3</sub>(Gd<sub>2</sub>O<sub>3</sub>)/InGaAs enhancement-mode n-channel MOSFETs F. Ren, J. M. Kuo, M. Hong, IEEE Electron Device Letters Electrical EngineeringEngineeringEnhancement-mode N-channel MosfetsElectronic EngineeringApplied Physics	1998	142
Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy S. J. Pearton, C. R. Abernathy, F. Ren, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceAluminium NitrideElectrical EngineeringElectronic DevicesEngineering	1993	101
Plasma and wet chemical etching of In0.5Ga0.5P J. R. Lothian, J. M. Kuo, F. Ren, Journal of Electronic Materials Materials ScienceEngineeringMicrofabricationSurface ScienceApplied Physics	1992	88
Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors F. Ren, T. R. Fullowan, J. R. Lothian, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	1991	80
Ar+-ion milling characteristics of III-V nitrides S. J. Pearton, C. R. Abernathy, F. Ren, Journal of Applied Physics Iii-v NitridesEngineeringIon ImplantationIon MillingEv Ar+ Energy	1994	74
Dry etching of thin-film InN, AlN and GaN S. J. Pearton, C. R. Abernathy, F. Ren, Semiconductor Science and Technology Materials ScienceMaterials EngineeringChemical EngineeringAluminium Nitride1-30 Mtorr	1993	66
Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures F. Ren, S. J. Pearton, W. S. Hobson, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesEngineering	1990	52
High rate dry etching of InGaP in BCl3 plasma chemistries F. Ren, W. S. Hobson, J. R. Lothian, Applied Physics Letters Materials ScienceIngap Etch RateChemical EngineeringElectrical EngineeringAtomic Force Microscopy	1995	47
Thermal stability of W and WSix contacts on p-GaN X. A. Cao, S. J. Pearton, F. Ren, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	1998	46

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