J. R. Lothian

Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

F. Ren, M. Hong, W. S. Hobson et al. · Solid-State Electronics · 1997 · 150 citations

Electrical Engineering, Engineering, Oxide Electronics +4

Ga₂O₃(Gd₂O₃)/InGaAs enhancement-mode n-channel MOSFETs

F. Ren, J. M. Kuo, M. Hong et al. · IEEE Electron Device Letters · 1998 · 142 citations

Electrical Engineering, Engineering, Enhancement-mode N-channel Mosfets +6

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy

S. J. Pearton, C. R. Abernathy, F. Ren et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1993 · 101 citations

Materials Science, Aluminium Nitride, Electrical Engineering +14

Plasma and wet chemical etching of In0.5Ga0.5P

J. R. Lothian, J. M. Kuo, F. Ren et al. · Journal of Electronic Materials · 1992 · 88 citations

Materials Science, Engineering, Microfabrication +8

Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors

F. Ren, T. R. Fullowan, J. R. Lothian et al. · Applied Physics Letters · 1991 · 80 citations

Semiconductors, Materials Science, Electrical Engineering +14