IEEE Electron Device Letters · 1998 · 142 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationIii-v SemiconductorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesChannel DopingChannel Doping EffectsCurrent GainEnhancement-mode TransistorsOhmic ConductionTransconductance
We have demonstrated the first Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (Gd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) insulated gate n-channel enhancement-mode In/sub 0.53/Ga/sub 0.47/As MOSFET's on InP semi-insulating substrate. Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (Gd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) was electron beam deposited from a high purity single crystal Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> Gd <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> O/sub 12/ source. The source and drain regions of the device were selectively implanted with Si to produce low resistance ohmic contacts. A 0.75-μm gate length device exhibits an extrinsic transconductance of 190 mS/mm, which is an order of magnitude improvement over previously reported enhancement-mode InGaAs MISFETs. The current gain cutoff frequency, f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , and the maximum frequency of oscillation, f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> , of 7 and 10 GHz were obtained, respectively, for a 0.75×100 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> gate dimension device at a gate voltage of 3 V and drain voltage of 2 V.
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Wet Chemical and Plasma Etching of Ga2 O 3 ( Gd2 O 3 )
F. Ren, Minghui Hong, J. P. Mannáerts et al. · Journal of The Electrochemical Society · 1997 · 34 citations