W. S. Hobson

Ga2O3 films for electronic and optoelectronic applications

M. Passlack, E. Fred Schubert, W. S. Hobson et al. · Journal of Applied Physics · 1995 · 434 citations

Natural Sciences, Materials Science, Physics +17

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

B. F. Levine, A. Zussman, Sarath D. Gunapala et al. · Journal of Applied Physics · 1992 · 186 citations

Engineering, Electrical Engineering, Materials Science +17

High-power laser light source for near-field optics and its application to high-density optical data storage

Afshin Partovi, D. R. Peale, Matthias Wuttig et al. · Applied Physics Letters · 1999 · 163 citations · Full text

Computing, Electrical Engineering, Optics +14

Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

F. Ren, M. Hong, W. S. Hobson et al. · Solid-State Electronics · 1997 · 150 citations

Engineering, Electrical Engineering, Materials Science +12

Ga₂O₃(Gd₂O₃)/InGaAs enhancement-mode n-channel MOSFETs

F. Ren, J. M. Kuo, M. Hong et al. · IEEE Electron Device Letters · 1998 · 142 citations

Engineering, Electrical Engineering, Materials Science +15