M. Passlack

Ga2O3 films for electronic and optoelectronic applications

M. Passlack, E. Fred Schubert, W. S. Hobson et al. · Journal of Applied Physics · 1995 · 432 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by <i>in</i> <i>situ</i> molecular beam epitaxy

M. Passlack, M. Hong, J. P. Mannáerts · Applied Physics Letters · 1996 · 222 citations

Materials Science, Semiconductors, Electrical Engineering +14

Dielectric properties of electron-beam deposited Ga2O3 films

M. Passlack, N. E. J. Hunt, E. Fred Schubert et al. · Applied Physics Letters · 1994 · 212 citations

Materials Engineering, Dielectric Properties, Materials Science +10

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Richard J. Hill, David A. J. Moran, Xu Li et al. · IEEE Electron Device Letters · 2007 · 170 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Low interface state density oxide-GaAs structures fabricated by <i>in</i> <i>situ</i> molecular beam epitaxy

M. Hong, M. Passlack, J. P. Mannáerts et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 165 citations

Semiconductors, Materials Science, Oxide Heterostructures +14