Low interface state density oxide-GaAs structures fabricated by <i>in</i> <i>situ</i> molecular beam epitaxy

Abstract

Several oxide-GaAs heterostructures were fabricated using in situ multiple-chamber molecular beam epitaxy. The oxides include SiO2, MgO, and Ga2O3(Gd2O3), all evaporated by an electron beam method. The SiO2 and Ga2O3(Gd2O3) films are amorphous while the MgO films are crystalline and part of the films are epitaxially grown on GaAs(100). Among these heterostructures, the Ga2O3(Gd2O3)–GaAs shows a photoluminescence intensity comparable to that of Al0.45Ga0.55As–GaAs, and forms accumulation and inversion layers as measured from capacitance voltage measurement in quasistatic and high frequency modes.