David A. J. Moran

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Richard J. Hill, David A. J. Moran, Xu Li et al. · IEEE Electron Device Letters · 2007 · 171 citations

Engineering, Electrical Engineering, Materials Science +17

Surface transfer doping of diamond by MoO₃: A combined spectroscopic and Hall measurement study

Stephen Russell, Liang Cao, Dongchen Qi et al. · Applied Physics Letters · 2013 · 111 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz

Stephen Russell, Salah Sharabi, Alexandre Tallaire et al. · IEEE Electron Device Letters · 2012 · 93 citations

Engineering, Electrical Engineering, Microelectronics +16

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Kevin G. Crawford, Liang Cao, Dongchen Qi et al. · Applied Physics Letters · 2016 · 93 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides

Kevin G. Crawford, Dongchen Qi, Jessica C. McGlynn et al. · Scientific Reports · 2018 · 68 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +12