Xu Li

Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

Richard J. Hill, David A. J. Moran, Xu Li et al. · IEEE Electron Device Letters · 2007 · 170 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT

Raphael Brown, D. MacFarlane, Abdullah Al‐Khalidi et al. · IEEE Electron Device Letters · 2014 · 64 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS

R. Oxland, S. W. Chang, Xu Li et al. · IEEE Electron Device Letters · 2012 · 40 citations

Electrical Engineering, Semiconductor Device, Engineering +14

Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Steven Bentley, M. Holland, Xu Li et al. · IEEE Electron Device Letters · 2011 · 36 citations

Semiconductors, Electron Density, Electrical Engineering +15

Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon

Bhavana Benakaprasad, Abdalla Eblabla, Xu Li et al. · IEEE Transactions on Electron Devices · 2020 · 29 citations