R. Oxland

Demonstration of scaled Ge p-channel FinFETs integrated on Si

M.J.H. van Dal, G. Vellianitis, G. Doornbos et al. · 2012 · 44 citations

Engineering, Electrical Engineering, Electronic Materials +11

Scaled p-channel Ge FinFET with optimized gate stack and record performance integrated on 300mm Si wafers

B. Duriez, G. Vellianitis, M.J.H. van Dal et al. · 2013 · 44 citations

Engineering, Electrical Engineering, Materials Science +15

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS

R. Oxland, S. W. Chang, Xu Li et al. · IEEE Electron Device Letters · 2012 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos et al. · Applied Physics Letters · 2013 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Ge n-channel FinFET with optimized gate stack and contacts

M.J.H. van Dal, B. Duriez, G. Vellianitis et al. · 2014 · 32 citations

Engineering, Electrical Engineering, Materials Science +12