T. R. Fullowan

Carbon doping of III–V compounds grown by MOMBE

C. R. Abernathy, S. J. Pearton, F. Ren et al. · Journal of Crystal Growth · 1990 · 112 citations

Materials Engineering, Inorganic Chemistry, Engineering +3

Stability of carbon and beryllium-doped base GaAs/AlGaAs heterojunction bipolar transistors

F. Ren, T. R. Fullowan, J. R. Lothian et al. · Applied Physics Letters · 1991 · 80 citations

Semiconductors, Materials Science, Electrical Engineering +14

Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures

F. Ren, S. J. Pearton, W. S. Hobson et al. · Applied Physics Letters · 1990 · 52 citations

Materials Science, Semiconductors, Electrical Engineering +12

Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage

S. J. Pearton, M. J. Vasile, K. S. Jones et al. · Journal of Applied Physics · 1989 · 41 citations

Plasma Power Density, Engineering, Vacuum Device +16

Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp

Y.K. Park, T.V. Nguyen, Paul A. Morton et al. · IEEE Photonics Technology Letters · 1996 · 41 citations

Photonics, 130-Km Standard Fiber, Engineering +14