Carbon doping of III–V compounds grown by MOMBE

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

C. R. Abernathy, S. J. Pearton, R. Caruso et al. · Applied Physics Letters · 1989 · 215 citations

Engineering, Electrical Engineering, Materials Science +17

Abrupt <i>p</i>-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy

Naoki Kobayashi, Toshiki Makimōto, Yoshiji Horíkoshi · Applied Physics Letters · 1987 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of <i>p</i>-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxy

Koki Saito, Eisuke Tokumitsu, Takeshi Akatsuka et al. · Journal of Applied Physics · 1988 · 159 citations

Engineering, Materials Science, Physics +16

Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

Makoto Konagai, Takumi Yamada, Takeshi Akatsuka et al. · Journal of Crystal Growth · 1989 · 156 citations

Engineering, Materials Engineering, Materials Science +14

GaAs growth in metal–organic MBE

N. Pütz, E. Veuhoff, H. Heinecke et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +16