A. S. Jordan - Concepedia

Author

A. S. Jordan

Also Known As

A Jordan, A. Jordan, A. S. JORDAN, A. S. Jordan, A.S Jordan, A.S. Jordan, Andreas Jordan, Andrew Jordan, Andrew S Jordan, Andrew S. Jordan

114

Publications

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Nokia (United States)Air Products (United States)

About

A. S. Jordan is an author at AT&T (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	46	2.3K
2	Applied Physics	22	38	2K
3	Natural Sciences	8	8	154
4	Medicine	1	1	76
5	Biochemistry	1	1	29

A. S. Jordan

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals A. S. Jordan, R. Caruso, A. R. Von Neida Bell System Technical Journal Optical MaterialsEngineeringCrystal Growth TechnologyLaser ApplicationsSemiconductors	1980	345
A theory of regular associated solutions applied to the liquidus curves of the Zn-Te and Cd-Te systems A. S. Jordan Metallurgical Transactions Quantum LiquidPhysicsCd-te SystemsLiquidus CurvesSimple Liquid	1970	216
An evaluation of the thermal and elastic constants affecting GaAs crystal growth A. S. Jordan Journal of Crystal Growth Materials ScienceElastic ConstantsEngineeringCrystal Growth TechnologyApplied Physics	1980	150
A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals A. S. Jordan, R. Caruso, A. R. VonNeida, Journal of Applied Physics EngineeringCrystal Growth TechnologySemiconductor DeviceSemiconductorsPulled Gaas	1981	137
The theory and practice of dislocation reduction in GaAs and InP A. S. Jordan, A. R. Von Neida, R. Caruso Journal of Crystal Growth SemiconductorsSemiconductor TechnologyEngineeringDislocation InteractionPhysics	1984	135
Solid-liquid equilibria for quaternary solid solutions involving compound semiconductors in the regular solution approximation A. S. Jordan, M. Ilegems Journal of Physics and Chemistry of Solids SemiconductorsMaterials ScienceQuantum LiquidEngineeringPhase Equilibrium	1975	125
Carbon doping of III–V compounds grown by MOMBE C. R. Abernathy, S. J. Pearton, F. Ren, Journal of Crystal Growth Materials EngineeringInorganic ChemistryEngineeringCarbon DopingChemistry	1990	112
The theoretical and experimental fundamentals of decreasing dislocations in melt grown GaAs and InP A. S. Jordan, A. R. Von Neida, R. Caruso Journal of Crystal Growth SemiconductorsEngineeringDislocation InteractionPhysicsApplied Physics	1986	111
Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane C. R. Abernathy, A. S. Jordan, S. J. Pearton, Applied Physics Letters Materials ScienceAluminium NitrideBiomanufacturingOptical MaterialsEngineering	1990	101
Finite Element Analysis of a Thermal‐Capillary Model for Liquid Encapsulated Czochralski Growth Jeffrey J. Derby, Robert A. Brown, F. T. Geyling, Journal of The Electrochemical Society Materials ScienceThermodynamic ModellingHeat Transfer ProcessEngineeringThermal Transport	1985	84

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