R. Caruso - Concepedia

Concepedia

Author

R. Caruso

AT&T (United States)

Also Known As

Caruso, R., Caruso, Ricardo, R Caruso, R. CARUSO, R. Caruso, Ricardo Caruso

87

Publications

2.1K

Citations

25

H-Index

56

Concepts

All Affiliations

AT&T (United States)Institute of Physics Rosario Universidad de Extremadura Consejo Nacional de Investigaciones Científicas y Técnicas National University of Rosario

RC

About

R. Caruso is an author at AT&T (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	42	2.1K
2	Applied Physics	22	29	1.8K
3	Chemistry	8	8	239
4	Chemical Engineering	2	2	31
5	Natural Sciences	1	1	20

R. Caruso

×

42

Publications

2.1K

Citations

25

H-Index

	Year	Citations
A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals A. S. Jordan, R. Caruso, A. R. Von Neida Bell System Technical Journal Optical MaterialsEngineeringCrystal Growth TechnologyLaser ApplicationsSemiconductors	1980	345
Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy C. R. Abernathy, S. J. Pearton, R. Caruso, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesUltrahigh DopingSemiconductor Device	1989	215
A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals A. S. Jordan, R. Caruso, A. R. VonNeida, Journal of Applied Physics EngineeringCrystal Growth TechnologySemiconductor DeviceSemiconductorsPulled Gaas	1981	137
The theory and practice of dislocation reduction in GaAs and InP A. S. Jordan, A. R. Von Neida, R. Caruso Journal of Crystal Growth SemiconductorsSemiconductor TechnologyEngineeringDislocation InteractionPhysics	1984	135
The theoretical and experimental fundamentals of decreasing dislocations in melt grown GaAs and InP A. S. Jordan, A. R. Von Neida, R. Caruso Journal of Crystal Growth SemiconductorsEngineeringDislocation InteractionPhysicsApplied Physics	1986	111
Densification and porosity evaluation of ZrO2–3 mol.% Y2O3 sol–gel thin films Antonio Díaz-Parralejo, R. Caruso, Ángel L. Ortiz, Thin Solid Films Materials ScienceMaterials EngineeringEngineeringOxide ElectronicsCeramic Material	2004	94
Determination of the Solidus and Gallium and Phosphorus Vacancy Concentrations in GaP A. S. Jordan, A. R. Von Neida, R. Caruso, Journal of The Electrochemical Society Rare Earth MineralEngineeringCrystal Growth TechnologySolid-state ChemistrySolidus Data	1974	75
Luminescence and Minority Carrier Recombination in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type GaP(Zn,O) J. M. Dishman, M. DiDomenico, R. Caruso Physical review. B, Solid state SemiconductorsPhotonicsMath XmlnsIi-vi SemiconductorEngineering	1970	58
The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes R. J. Roedel, A. R. Von Neida, R. Caruso, Journal of The Electrochemical Society Dislocation ConfigurationEngineeringOptoelectronic DevicesSemiconductorsNanoelectronics	1979	49
Zirconium Oxide Structure Prepared by the Sol–Gel Route: I, The Role of the Alcoholic Solvent M. C. Caracóche, P. C. Rivas, Mario M. Cervera, Journal of the American Ceramic Society Materials ScienceInorganic ChemistryZirconium N ‐PropoxideSol–gel RouteEngineering	2000	41

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