J. Kovalchick

Carbon doping of III–V compounds grown by MOMBE

C. R. Abernathy, S. J. Pearton, F. Ren et al. · Journal of Crystal Growth · 1990 · 112 citations

Engineering, Materials Engineering, Materials Science +14

Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4

R. M. Lum, J. K. Klingert, D. W. Kisker et al. · Journal of Electronic Materials · 1988 · 74 citations

Engineering, Materials Engineering, Materials Science +9

Metalorganic chemical vapor deposition of aluminum from trimethylamine alane using Cu and TiN nucleation activators

M. E. Gross, Kin P. Cheung, Cass Fleming et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +17

Heterointerface stability in GaAs-on-Si grown by metalorganic chemical vapor deposition

S. J. Pearton, D. L. Malm, L. A. Heimbrook et al. · Applied Physics Letters · 1987 · 25 citations

Engineering, Materials Engineering, Materials Science +17

Electrical conduction in the Si(111):B-(√3 × √3 )<i>R</i>30°/<i>a</i>-Si interface reconstruction

Randall L. Headrick, A. F. J. Levi, H. S. Luftman et al. · Physical review. B, Condensed matter · 1991 · 23 citations

Engineering, Materials Science, Physics +17