Electrical conduction in the Si(111):B-(√3 × √3 )<i>R</i>30°/<i>a</i>-Si interface reconstruction

Abstract

One-third of a monolayer of spatially ordered boron on (111)-oriented crystalline silicon is prepared in ultrahigh vacuum and then buried under a thin layer of amorphous silicon. This leaves a two-dimensional (\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 ) boron layer in substitutional sites confined to a single monolayer on the crystalline side of the interface. We report electrical conductivity with a high p-type carrier density (&gt;${10}^{14}$/${\mathrm{cm}}^{2}$) in an ordered two-dimensional interface layer.