J. K. Klingert

Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

R. M. Lum, J. K. Klingert, M. G. Lamont · Applied Physics Letters · 1987 · 106 citations

Natural Sciences, Chemistry, Materials Science +17

Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4

R. M. Lum, J. K. Klingert, D. W. Kisker et al. · Journal of Electronic Materials · 1988 · 74 citations

Engineering, Materials Engineering, Materials Science +9

Improvements in the heteroepitaxy of GaAs on Si

R. M. Lum, J. K. Klingert, B. A. Davidson et al. · Applied Physics Letters · 1987 · 59 citations

Engineering, Materials Engineering, Materials Science +17

13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs

R. M. Lum, J. K. Klingert, D. W. Kisker et al. · Journal of Crystal Growth · 1988 · 55 citations

Natural Sciences, Materials Engineering, Materials Science +14

Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs

R. M. Lum, J. K. Klingert, M. G. Lamont · Journal of Crystal Growth · 1988 · 51 citations

Engineering, Electrical Engineering, Materials Science +7