M. G. Lamont

Discrete Plasmons in Finite Semiconductor Multilayers

A. Pinczuk, M. G. Lamont, A. C. Gossard · Physical Review Letters · 1986 · 173 citations

Ii-vi Semiconductor, Plasmonics, Complete Periodicity +10

Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption

C. W. Tu, Robert C. Miller, Barbara A. Wilson et al. · Journal of Crystal Growth · 1987 · 107 citations

Materials Science, Engineering, Growth Interruption +5

Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

R. M. Lum, J. K. Klingert, M. G. Lamont · Applied Physics Letters · 1987 · 106 citations

Engineering, Crystal Growth Technology, New Arsenic Source +16

Laser-assisted metalorganic molecular beam epitaxy of GaAs

V. M. Donnelly, C. W. Tu, J. C. Beggy et al. · Applied Physics Letters · 1988 · 63 citations

Materials Science, Semiconductors, Laser Radiation +15

Improvements in the heteroepitaxy of GaAs on Si

R. M. Lum, J. K. Klingert, B. A. Davidson et al. · Applied Physics Letters · 1987 · 59 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14