Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

Abstract

Epitaxial films of GaAs have been grown by metalorganic chemical vapor deposition using a new arsenic source, tertiarybutylarsine (TBAs). Films with excellent surface morphology were obtained for low V/III values over a wide temperature range (600–800 °C), and relatively strong free-exciton emission was observed in the photoluminescence spectra. Hall measurements indicate carrier concentrations as low as 5×1015 cm−3 and mobilities μ300=4000 cm2/V s. These are equivalent or better than results obtained with trimethylarsenic. In contrast to growth with arsine, the layers were found to be n type for all values of V/III ratio investigated (2–20). Higher quality layers can be expected with source repurification of synthesis via a purer chemical process.