C. W. Tu

Bowing parameter of the band-gap energy of GaNxAs1−x

Wengang Bi, C. W. Tu · Applied Physics Letters · 1997 · 402 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +9

Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution

A. Ourmazd, Derek W. Taylor, J. E. Cunningham et al. · Physical Review Letters · 1989 · 306 citations

Engineering, Microscopy, Computational Chemistry +22

Nature of the fundamental band gap in GaNxP1−x alloys

W. Shan, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2000 · 239 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Donor neutralization in GaAs(Si) by atomic hydrogen

J. Chevallier, W. C. Dautremont–Smith, C. W. Tu et al. · Applied Physics Letters · 1985 · 234 citations

Engineering, Dissociation Energy, Semiconductor Device +16

Lifetime Enhancement of Two-Dimensional Excitons by the Quantum-Confined Stark Effect

H.-J. Polland, L. Schultheis, J. Kühl et al. · Physical Review Letters · 1985 · 203 citations

Localized Excited State, Engineering, Excitation Energy Transfer +20