W. C. Dautremont–Smith

Donor neutralization in GaAs(Si) by atomic hydrogen

J. Chevallier, W. C. Dautremont–Smith, C. W. Tu et al. · Applied Physics Letters · 1985 · 234 citations

Engineering, Dissociation Energy, Semiconductor Device +16

Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmas

Vincent M. Donnelly, Daniel Flamm, W. C. Dautremont–Smith et al. · Journal of Applied Physics · 1984 · 214 citations

Materials Science, Materials Engineering, Steady State +15

Hydrogenation of shallow-donor levels in GaAs

S. J. Pearton, W. C. Dautremont–Smith, J. Chevallier et al. · Journal of Applied Physics · 1986 · 175 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Vibrational characteristics of acceptor-hydrogen complexes in silicon

Michael Stavola, S. J. Pearton, J. Lopata et al. · Applied Physics Letters · 1987 · 148 citations

Engineering, Physics, Theoretical Inorganic Chemistry +15

Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropy

Todd R. Hayes, M. Dreisbach, W. C. Dautremont–Smith et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 142 citations

Significant Hydrocarbon Film, Engineering, Electron-beam Lithography +19