Nature of the fundamental band gap in GaNxP1−x alloys

Abstract

The optical properties of GaNxP1−x alloys (0.007⩽x⩽0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaNxP1−x at energy below the indirect ΓV–XC transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaNxP1−x indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the Γ conduction-band minimum.