W. Shan - Concepedia

Author

W. Shan

Lawrence Berkeley National Laboratory ORCID

Also Known As

W Shan, W. Shan, Wei Shan, Wenchao Shan

Publications

6.6K

Citations

H-Index

Concepts

All Affiliations

Lawrence Berkeley National Laboratory University of California, Berkeley National Renewable Energy Laboratory Cornell University Australian National University

About

W. Shan is an author at Lawrence Berkeley National Laboratory specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	40	6.3K
2	Applied Physics	28	37	6.2K
3	Chemistry	5	5	804
4	Natural Sciences	3	3	748
5	Chemical Engineering	1	1	27

W. Shan

Publications

6.3K

Citations

H-Index

Page 1

	Year	Citations
Band Anticrossing in GaInNAs Alloys W. Shan, W. Walukiewicz, Joel W. Ager, Physical Review Letters Materials ScienceMaterials EngineeringConduction BandEngineeringNitrogen States	1999	1.6K
Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system Junqiao Wu, W. Walukiewicz, K. M. Yu, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesPhotovoltaic DevicesElectronic Properties	2003	605
Effects of the narrow band gap on the properties of InN Junqiao Wu, W. Walukiewicz, W. Shan, Physical review. B, Condensed matter SemiconductorsIi-vi SemiconductorElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	410
Temperature dependence of the fundamental band gap of InN Junqiao Wu, W. Walukiewicz, W. Shan, Journal of Applied Physics Materials ScienceIi-vi SemiconductorEngineeringPhysicsNanoelectronics	2003	395
Nature of room-temperature photoluminescence in ZnO W. Shan, W. Walukiewicz, Joel W. Ager, Applied Physics Letters EngineeringLuminescent GlassFree Exciton TransitionChemistryLuminescence Property	2005	302
Diluted II-VI Oxide Semiconductors with Multiple Band Gaps K. M. Yu, W. Walukiewicz, Junqiao Wu, Physical Review Letters SemiconductorsMaterials ScienceIi-vi Oxide SemiconductorsIi-vi SemiconductorEngineering	2003	293
Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x C. Skierbiszewski, P. Perlin, P. Wiśniewski, Applied Physics Letters SemiconductorsSemiconductor TechnologyWide-bandgap SemiconductorEngineeringDramatic Increase	2000	247
Nature of the fundamental band gap in GaNxP1−x alloys W. Shan, W. Walukiewicz, K. M. Yu, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringDirect Band GapOptoelectronic Devices	2000	239
Interaction of Localized Electronic States with the Conduction Band: Band Anticrossing in II-VI Semiconductor Ternaries W. Walukiewicz, W. Shan, K. M. Yu, Physical Review Letters EngineeringZns XteBand AnticrossingSemiconductorsIi-vi Semiconductor	2000	210
Fermi-level stabilization energy in group III nitrides S. X. Li, K. M. Yu, Junqiao Wu, Physical Review B Materials ScienceIon ImplantationEngineeringPhysicsCrystalline Defects	2005	206

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