V. M. Donnelly - Concepedia

Concepedia

Author

V. M. Donnelly

AT&T (United States)

Also Known As

V. M. DONNELLY, V. M. Donnelly, V.M Donnelly, V.M. Donnelly

50

Publications

1.5K

Citations

23

H-Index

69

Concepts

All Affiliations

AT&T (United States)Nokia (United States)

VM

About

V. M. Donnelly is an author at AT&T (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	33	1.5K
2	Applied Physics	21	30	1.4K
3	Chemistry	13	15	695
4	Chemical Engineering	6	6	303
5	Natural Sciences	3	3	183

V. M. Donnelly

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33

Publications

1.5K

Citations

23

H-Index

	Year	Citations
Temperature dependence of the near-infrared refractive index of silicon, gallium arsenide, and indium phosphide J. A. McCaulley, V. M. Donnelly, Matthew Vernon, Physical review. B, Condensed matter Optical MaterialsEngineeringOptical GlassOptical TestingTemperature Dependence	1994	156
Infrared-laser interferometric thermometry: A nonintrusive technique for measuring semiconductor wafer temperatures V. M. Donnelly, J. A. McCaulley Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Short Wavelength OpticOptical MaterialsEngineeringInterferometric TechniqueOptical Testing	1990	101
Products of thermal decomposition of triethylgallium and trimethylgallium adsorbed on Ga-stabilized GaAs(100) V. M. Donnelly, J. A. McCaulley Surface Science Materials EngineeringMaterials ScienceEngineeringApplied PhysicsThermal Decomposition	1990	80
Laser-induced decomposition of triethylgallium and trimethylgallium adsorbed on gallium arsenide(100) J. A. McCaulley, V. R. McCrary, V. M. Donnelly The Journal of Physical Chemistry Chemical KineticsChemical EngineeringEngineeringChemical MeasurementLaser Photochemistry	1989	74
Development of laser diagnostic probes for chemical vapor deposition of InP/InGaAsP epitaxial layers V. M. Donnelly, R. F. Karlicek Journal of Applied Physics EngineeringCvd Growth ReactorChemistryChemical DepositionChemical Engineering	1982	72
Photon, beam, and plasma stimulated chemical processes at surfaces V. M. Donnelly, Irving P. Herman, M. Hirose OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) Optical MaterialsEngineeringLaser-plasma InteractionLaser PhysicsLaser Applications	1987	69
Kinetics of thermal decomposition of triethylgallium, trimethylgallium, and trimethylindium adsorbed on GaAs(100) J. A. McCaulley, R. J. Shul, V. M. Donnelly Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Methyl Exchange ReactionChemical EngineeringCh3 DesorptionEngineeringNatural Sciences	1991	69
Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl2/O2 high density plasmas K. Guinn, Chih‐Chia Cheng, V. M. Donnelly Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials SciencePure Cl2 PlasmasEngineeringSurface Chemical CompositionCrystalline Defects	1995	69
Competitive halogenation of silicon surfaces in HBr/Cl2 plasmas studied with x-ray photoelectron spectroscopy and <i>in situ</i>, real-time, pulsed laser-induced thermal desorption Chih‐Chia Cheng, K. Guinn, Irving P. Herman, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceEngineeringCl2 PlasmasOptical DiagnosticsLaser-induced Breakdown	1995	68
Excimer laser-induced deposition of InP: Crystallographic and mechanistic studies V. M. Donnelly, D. Brasen, A. Appelbaum, Journal of Applied Physics Optical MaterialsEngineeringCrystal Growth TechnologyLaser ApplicationsChemistry	1985	65

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