Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

Engineering, Electrical Engineering, Materials Science +12

Mechanism of carbon incorporation in MOCVD GaAs

T. F. Kuech, E. Veuhoff · Journal of Crystal Growth · 1984 · 226 citations

Engineering, Materials Engineering, Materials Science +12

Luminescence and Excitation Spectra of Exciton Emission in GaAs

U. Heim, P. Hiesinger · physica status solidi (b) · 1974 · 174 citations

Natural Sciences, Materials Science, Optoelectronics +16

Use of tertiarybutylarsine for GaAs growth

C. H. Chen, C.A. Larsen, G. B. Stringfellow · Applied Physics Letters · 1987 · 128 citations

Engineering, Materials Engineering, Materials Science +17

Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs

R. M. Lum, J. K. Klingert, M. G. Lamont · Applied Physics Letters · 1987 · 106 citations

Natural Sciences, Chemistry, Materials Science +17