D. W. Kisker

OC-48 capable InGaAsN vertical cavity lasers

W. Andrew Jackson, R.L. Naone, Mark J. Dalberth et al. · Electronics Letters · 2001 · 81 citations

Engineering, Electrical Engineering, Materials Science +16

Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4

R. M. Lum, J. K. Klingert, D. W. Kisker et al. · Journal of Electronic Materials · 1988 · 74 citations

Engineering, Materials Engineering, Materials Science +9

Molecular beam epitaxial growth of In1−<i>x</i>Ga<i>x</i>As1−<i>y</i>Sb<i>y</i> lattice matched to GaSb

W. T. Tsang, T. H. Chiu, D. W. Kisker et al. · Applied Physics Letters · 1985 · 73 citations

Engineering, Materials Engineering, Materials Science +17

Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering

D. W. Kisker, G. B. Stephenson, P. H. Fuoss et al. · Journal of Crystal Growth · 1992 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +13

GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy

M. J. Cherng, G. B. Stringfellow, D. W. Kisker et al. · Applied Physics Letters · 1986 · 70 citations

Natural Sciences, Materials Engineering, Materials Science +15