W. T. Tsang - Concepedia

Author

W. T. Tsang

AT&T (United States)

Also Known As

W. T. TSANG, W. T. Tsang, W. Tsang, W.T. Tsang, Won−Tien Tsang

168

Publications

5.4K

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Nokia (United States)

About

W. T. Tsang is an author at AT&T (United States) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	38	80	5K
2	Applied Physics	38	76	4.9K
3	Natural Sciences	4	4	204
4	Chemistry	2	2	124
5	Chemical Engineering	1	1	255

W. T. Tsang

Publications

Citations

H-Index

Page 1

	Year	Citations
Observation of the excited level of excitons in GaAs quantum wells Robert C. Miller, D. A. Kleinman, W. T. Tsang, Physical review. B, Condensed matter SemiconductorsQuantum ScienceAdjustable ParametersExcited LevelEngineering	1981	488
Large room-temperature optical nonlinearity in GaAs/Ga1−<i>x</i> Al<i>x</i>As multiple quantum well structures David A. B. Miller, D. S. Chemla, D. J. Eilenberger, Applied Physics Letters Large NonlinearityQuantum PhotonicsEngineeringNonlinear OpticsOptoelectronic Devices	1982	401
Extrinsic photoluminescence from GaAs quantum wells Robert C. Miller, A. C. Gossard, W. T. Tsang, Physical review. B, Condensed matter SemiconductorsOptical MaterialsEngineeringPhotoluminescencePhysics	1982	277
Chemical beam epitaxy of InP and GaAs W. T. Tsang Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringChemical EngineeringElectronic Devices	1984	255
Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy W. T. Tsang, E. F. Schubert Applied Physics Letters SemiconductorsWide-bandgap SemiconductorEpitaxial GrowthPhotoluminescenceEngineering	1986	168
A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam W. T. Tsang Applied Physics Letters EngineeringSymmetric Laser StructureLaser ApplicationsLaser MaterialOptoelectronic Devices	1981	167
A model for the surface chemical kinetics of GaAs deposition by chemical-beam epitaxy A. Robertson, T. H. Chiu, W. T. Tsang, Journal of Applied Physics EngineeringChemical DepositionSemiconductor NanostructuresSemiconductorsSurface Chemical Kinetics	1988	162
Capture of electrons and holes in quantum wells B. Deveaud, Jagdeep Shah, T. C. Damen, Applied Physics Letters SemiconductorsQuantum ScienceCategoryquantum ElectronicsPhotoluminescenceEngineering	1988	152
Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As D. V. Lang, M. B. Panish, Federico Capasso, Applied Physics Letters Wide-bandgap SemiconductorIi-vi SemiconductorElectrical EngineeringEngineeringPhysics	1987	145
Auger recombination in bulk and quantum well InGaAs S. Hausser, Gregory D. Fuchs, A. Hangleiter, Applied Physics Letters PhotonicsAuger RecombinationEngineeringPhotoluminescencePhysics	1990	123

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