Publication | Closed Access
Observation of the excited level of excitons in GaAs quantum wells
488
Citations
4
References
1981
Year
SemiconductorsQuantum ScienceAdjustable ParametersExcited LevelEngineeringPhotoluminescencePhysicsGaas Quantum WellsExcitation SpectraQuantum DeviceGround-state Binding EnergiesApplied PhysicsQuantum MaterialsCondensed Matter PhysicsOptoelectronicsCompound Semiconductor
The light- and heavy-hole two-dimensional exciton term values are determined directly from the excitation spectra of GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterostructures with GaAs well widths $L$ from 42 to 145 \AA{}. these values are in excellent agreement with a theoretical model which contains no adjustable parameters. This theory also gives integrated strengths for the excitons which agree with experiment, and ground-state binding energies as a function of $L$.
| Year | Citations | |
|---|---|---|
1971 | 1.1K | |
1981 | 305 | |
1976 | 100 | |
1980 | 54 |
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