Valence-Band Parameters in Cubic Semiconductors

Abstract

A five-level $\stackrel{\ensuremath{\rightarrow}}{\mathrm{k}}\ifmmode\cdot\else\textperiodcentered\fi{}\stackrel{\ensuremath{\rightarrow}}{\mathrm{p}}$ analysis is used to compute the principal effective-mass parameters at $k=0$ in diamond- and zinc-blende-type semiconductors. A semiempirical model is developed to describe the dependence of the momentum matrix elements on lattice constant, ionicity, and $d$-electron shells in the cores. Satisfactory agreement with available experimental data is achieved with six fitted parameters.