Applied Physics Letters · 1985 · 73 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceEpitaxial GrowthNanostructured Electronic MaterialsSemiconductor HeterostructuresSemiconductor SurfacesWide Band Gap SemiconductorsWide-bandgap SemiconductorsEpitaxial Film GrowthEpitaxial MaterialsHeterostructure MaterialsHeterostructuresLattice MismatchMolecular Beam EpitaxyPhotoluminescenceReflection High-energy Electron Diffraction
We have succeeded in growing epitaxial layers and multilayer heterostructures of In1−xGaxAs1−ySby quaternary and InAs0.92Sb0.08 ternary alloys lattice matched to GaSb by molecular beam epitaxy. High quality epilayers with lattice mismatch Δa/a∼8×10−4, excellent morphology, and efficient photoluminescence were grown. The surface reconstructions during growth of these quaternary and ternary alloys were also investigated using in situ reflection high-energy electron diffraction.
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The pseudoquaternary phase diagram of the Ga-In-As-Sb system
Kazuo Nakajima, Kōzō Osamura, Ken Yasuda et al. · Journal of Crystal Growth · 1977 · 76 citations