R. Ludeke

Molecular-beam epitaxy (MBE) of In1−<i>x</i>Ga<i>x</i>As and GaSb1−<i>y</i>As<i>y</i>

Chin‐An Chang, R. Ludeke, L. L. Chang et al. · Applied Physics Letters · 1977 · 206 citations

Engineering, Materials Engineering, Materials Science +17

In1−<i>x</i>Ga<i>x</i>As-GaSb1−<i>y</i>As<i>y</i> heterojunctions by molecular beam epitaxy

H. Sakaki, L. L. Chang, R. Ludeke et al. · Applied Physics Letters · 1977 · 201 citations

Natural Sciences, Materials Science, Physics +17

Structures Grown by Molecular Beam Epitaxy

L.L. Chang, L. Esaki, W. E. Howard et al. · Journal of Vacuum Science and Technology · 1973 · 148 citations

Engineering, Materials Engineering, Materials Science +14

The oxidation of GaAs(110): A reevaluation

G. Landgren, R. Ludeke, Y. Jugnet et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 147 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electron Energy-Loss Spectroscopy of GaAs and Ge Surfaces

R. Ludeke, L. Esaki · Physical Review Letters · 1974 · 137 citations

Natural Sciences, Materials Science, Physics +17